Refraction index modulation induced with transverse electric field in double tunnel-coupled GaAs AlGaAs quantum wells

Modulation of refraction index under transverse electric field was studied in structures with multiple tunnel-coupled GaAs AlGaAs quantum wells in the spectral range corresponding to intersubband light absorption. The change of refraction index in electric field was calculated using Kramers-Kronig r...

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Bibliographic Details
Published inJournal of physics. Conference series Vol. 643; no. 1; pp. 12076 - 12079
Main Authors Shumilov, A A, Vinnichenko, M Ya, Balagula, R M, Vorobjev, L E, Firsov, D A, Kulagina, M M, Vasil'iev, A P, Duque, C A, Tiutiunnyk, A, Akimov, V, Restrepo, R L, Tulupenko, V N, Ter-Martirosyan, A L
Format Journal Article
LanguageEnglish
Published Bristol IOP Publishing 02.11.2015
Subjects
Aluminum gallium arsenides
Electric fields
Electromagnetic absorption
Equilibrium conditions
Gallium arsenide
Modulation
Physics
Quantum wells
Refraction
Tunnels
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Summary:Modulation of refraction index under transverse electric field was studied in structures with multiple tunnel-coupled GaAs AlGaAs quantum wells in the spectral range corresponding to intersubband light absorption. The change of refraction index in electric field was calculated using Kramers-Kronig relation and experimentally determined spectra of intersubband light absorption in equilibrium conditions and under transverse electric field.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/643/1/012076