Photoluminescence measurements for GaAs grown on Si(100) and Si(111) by molecular beam epitaxy

• Published in: Applied physics letters Vol. 58; no. 6; pp. 628 - 630
• Main Authors: Sobiesierski, Z., Woolf, D. A., Westwood, D. I., Williams, R. H.
• Format: Journal Article
• Language: English
• Published: Melville, NY American Institute of Physics 11.02.1991
• Subjects: Condensed matter: structure, mechanical and thermal properties; Creep; Exact sciences and technology; Mechanical and acoustical properties of condensed matter; Mechanical properties of solids; Physics; Thickness; Gallium Arsenides; Tensile stress; Hole; Semiconductor materials; Thick film; Photoluminescence; Mechanical properties; Crystal face; Valence band; Experimental study; Inorganic compound
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.104550

Photoluminescence measurements have been used to characterize Si-doped GaAs layers, ranging in thickness from 1.1–8.1 μm, grown on Si(111) and misorientated Si(100) substrates by molecular beam epitaxy. 4.2 K PL spectra for GaAs/Si (100) show a strain-induced splitting between the heavy and light hole valence bands which corresponds to a biaxial tensile stress of 2.8± 0.15 kbar acting on the GaAs layer. Similar measurements for GaAs/Si(111) indicate that the GaAs layer is subject to a biaxial tensile stress of 3.9±0.15 kbar at 4.2 K. Furthermore, the intensity and line shape of luminescence features for GaAs/Si(111) for the first time indicate a crystalline quality comparable with the best GaAs/Si(100) material.