Electrical characteristics of Si MFIS-FETs using P(VDF-TrFE) thin films
Ferroelectric polymer memory transistors were fabricated by using PMMA (poly methyl metacrylate)-blended P(VDF-TrFE) (polyvinyliden fluoride-trifluoroethylene) as the gate ferroelectric film. The film was spin-coated on an SiO 2-coated n-type Si wafer with the p-type source and drain regions and Au...
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Published in | Current applied physics Vol. 11; no. 3; pp. S225 - S227 |
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Main Authors | , , |
Format | Journal Article |
Language | English |
Published |
Elsevier B.V
01.05.2011
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Subjects | |
Online Access | Get full text |
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Summary: | Ferroelectric polymer memory transistors were fabricated by using PMMA (poly methyl metacrylate)-blended P(VDF-TrFE) (polyvinyliden fluoride-trifluoroethylene) as the gate ferroelectric film. The film was spin-coated on an SiO
2-coated n-type Si wafer with the p-type source and drain regions and Au electrodes for the source, drain, and gate terminals were formed by thermal evaporation, followed by wet chemical etching. The on/off ratio and memory window width of the fabricated ferroelectric-gate FET were typically 10
7 and 5 V at the gate voltage swing of ±11 V, respectively. As for the data retention characteristics, the current on/off ratio of approximately 10
3 was obtained at 10
3 s after write operation. |
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Bibliography: | http://dx.doi.org/10.1016/j.cap.2011.03.016 |
ISSN: | 1567-1739 1878-1675 |
DOI: | 10.1016/j.cap.2011.03.016 |