Electrical characteristics of Si MFIS-FETs using P(VDF-TrFE) thin films

Ferroelectric polymer memory transistors were fabricated by using PMMA (poly methyl metacrylate)-blended P(VDF-TrFE) (polyvinyliden fluoride-trifluoroethylene) as the gate ferroelectric film. The film was spin-coated on an SiO 2-coated n-type Si wafer with the p-type source and drain regions and Au...

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Bibliographic Details
Published inCurrent applied physics Vol. 11; no. 3; pp. S225 - S227
Main Authors Yoon, Joo-Won, Yoon, Sung-Min, Ishiwara, Hiroshi
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.05.2011
Subjects
electrodes
evaporation
FeRAM
gold
MFIS-FET
Organic ferroelectric
P(VDF-TrFE)
physics
PMMA
polymers
silicon
Organic ferroelectric
PMMA
MFIS-FET
FeRAM
Si
P(VDF-TrFE)
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Summary:Ferroelectric polymer memory transistors were fabricated by using PMMA (poly methyl metacrylate)-blended P(VDF-TrFE) (polyvinyliden fluoride-trifluoroethylene) as the gate ferroelectric film. The film was spin-coated on an SiO 2-coated n-type Si wafer with the p-type source and drain regions and Au electrodes for the source, drain, and gate terminals were formed by thermal evaporation, followed by wet chemical etching. The on/off ratio and memory window width of the fabricated ferroelectric-gate FET were typically 10 7 and 5 V at the gate voltage swing of ±11 V, respectively. As for the data retention characteristics, the current on/off ratio of approximately 10 3 was obtained at 10 3 s after write operation.
Bibliography:http://dx.doi.org/10.1016/j.cap.2011.03.016
ISSN:1567-1739
1878-1675
DOI:10.1016/j.cap.2011.03.016