Application of nano-pulsed Nd:YAG laser to crystallization of amorphous Si thin films for next generation flat-panel display
A 532nm Nd:YAG laser was applied to crystallize amorphous Si thin films in order to evaluate the applicability of Nd:YAG laser to low-temperature polycrystalline Si technology. In this study, we aim at enhancing uniformity as well as crystallinity. In order to achieve the goal, a new optical system...
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| Published in | International journal of precision engineering and manufacturing Vol. 13; no. 4; pp. 587 - 591 |
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| Main Authors | , , , , , |
| Format | Journal Article |
| Language | English |
| Published |
Springer
Korean Society for Precision Engineering
01.04.2012
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| Subjects | |
| Online Access | Get full text |
| ISSN | 2234-7593 2005-4602 |
| DOI | 10.1007/s12541-012-0075-6 |
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| Abstract | A 532nm Nd:YAG laser was applied to crystallize amorphous Si thin films in order to evaluate the applicability of Nd:YAG laser to low-temperature polycrystalline Si technology. In this study, we aim at enhancing uniformity as well as crystallinity. In order to achieve the goal, a new optical system called as a diffusing system was used to enhance the uniformity of irradiating beam profile, consequently improving the quality of crystallized microstructures. Optimal processing parameters for high crystallinity and uniformity were developed by design of experiments (DOE). To investigate crystallinity and uniformity, Raman spectroscopy and optical microscopy were utilized. Therefore, the effectiveness of Nd:YAG laser is suggested as a feasible alternative that is capable of crystallizing the amorphous Si thin films. |
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| AbstractList | A 532nm Nd:YAG laser was applied to crystallize amorphous Si thin films in order to evaluate the applicability of Nd:YAG laser to low-temperature polycrystalline Si technology. In this study, we aim at enhancing uniformity as well as crystallinity. In order to achieve the goal, a new optical system called as a diffusing system was used to enhance the uniformity of irradiating beam profile, consequently improving the quality of crystallized microstructures. Optimal processing parameters for high crystallinity and uniformity were developed by design of experiments (DOE). To investigate crystallinity and uniformity, Raman spectroscopy and optical microscopy were utilized. Therefore, the effectiveness of Nd:YAG laser is suggested as a feasible alternative that is capable of crystallizing the amorphous Si thin films. |
| Author | Park, Seungho Chung, Haseung Shin, Seungwon Lee, Jaewon Hwang, Jin-Ha Lee, Sang Won |
| Author_xml | – sequence: 1 givenname: Jaewon surname: Lee fullname: Lee, Jaewon organization: Dept. of Mechanical Engineering, Hongik University – sequence: 2 givenname: Jin-Ha surname: Hwang fullname: Hwang, Jin-Ha organization: Dept. of Material Science and Engineering, Hongik University – sequence: 3 givenname: Sang Won surname: Lee fullname: Lee, Sang Won organization: School of Mechanical Engineering, Sungkyunkwan University – sequence: 4 givenname: Seungho surname: Park fullname: Park, Seungho organization: Dept. of Mechanical Engineering, Hongik University – sequence: 5 givenname: Seungwon surname: Shin fullname: Shin, Seungwon organization: Dept. of Mechanical Engineering, Hongik University – sequence: 6 givenname: Haseung surname: Chung fullname: Chung, Haseung email: haseung@hongik.ac.kr organization: Dept. of Mechanical Engineering, Hongik University |
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| Cites_doi | 10.1109/16.40970 10.1063/1.113888 10.1063/1.342851 10.1149/1.2220934 10.3740/MRSK.2008.18.3.113 10.1007/s12541-011-0041-8 10.1109/55.485160 10.1143/JJAP.40.6177 10.1109/55.704408 10.1557/S0883769400036125 |
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| Keywords | Nd:YAG laser Amorphous Si thin films Design of experiments Crystallization Polycrystalline Si thin films |
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| References | Crowder, Garey, Smith, Sposili, Cho, Im (CR2) 1998; 19 CR3 Kim, Oh, Cheon, Jang (CR10) 2006; 48 Lee, So, Chung, Hwang (CR13) 2008; 18 Lee, Lee, Choi (CR8) 2001; 40 CR11 Ibok, Garg (CR4) 1993; 140 Kim, Park (CR12) 2011; 12 Lee, Joo (CR5) 1996; 17 Im, Sposili (CR7) 1996; 21 Lee, Jeon, Joo (CR6) 1995; 66 Kakkad, Smith, Lau, Fonash, Kerns (CR9) 1989; 65 Sera, Okumura, Uchida, Itoh, Karelso, Hotta (CR1) 1989; 36 R. Kakkad (75_CR9) 1989; 65 E. Ibok (75_CR4) 1993; 140 T. W. Kim (75_CR12) 2011; 12 K. Sera (75_CR1) 1989; 36 J. S. Im (75_CR7) 1996; 21 S. K. Kim (75_CR10) 2006; 48 75_CR11 75_CR3 J. Lee (75_CR13) 2008; 18 S. W. Lee (75_CR6) 1995; 66 S. W. Lee (75_CR5) 1996; 17 M. A. Crowder (75_CR2) 1998; 19 J. B. Lee (75_CR8) 2001; 40 |
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| Title | Application of nano-pulsed Nd:YAG laser to crystallization of amorphous Si thin films for next generation flat-panel display |
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