Application of nano-pulsed Nd:YAG laser to crystallization of amorphous Si thin films for next generation flat-panel display

A 532nm Nd:YAG laser was applied to crystallize amorphous Si thin films in order to evaluate the applicability of Nd:YAG laser to low-temperature polycrystalline Si technology. In this study, we aim at enhancing uniformity as well as crystallinity. In order to achieve the goal, a new optical system...

Full description

Saved in:
Bibliographic Details
Published inInternational journal of precision engineering and manufacturing Vol. 13; no. 4; pp. 587 - 591
Main Authors Lee, Jaewon, Hwang, Jin-Ha, Lee, Sang Won, Park, Seungho, Shin, Seungwon, Chung, Haseung
Format Journal Article
LanguageEnglish
Published Springer Korean Society for Precision Engineering 01.04.2012
Subjects
Engineering
Industrial and Production Engineering
Materials Science
Nd:YAG laser
Amorphous Si thin films
Design of experiments
Crystallization
Polycrystalline Si thin films
Online AccessGet full text

Cover

More Information
Summary:A 532nm Nd:YAG laser was applied to crystallize amorphous Si thin films in order to evaluate the applicability of Nd:YAG laser to low-temperature polycrystalline Si technology. In this study, we aim at enhancing uniformity as well as crystallinity. In order to achieve the goal, a new optical system called as a diffusing system was used to enhance the uniformity of irradiating beam profile, consequently improving the quality of crystallized microstructures. Optimal processing parameters for high crystallinity and uniformity were developed by design of experiments (DOE). To investigate crystallinity and uniformity, Raman spectroscopy and optical microscopy were utilized. Therefore, the effectiveness of Nd:YAG laser is suggested as a feasible alternative that is capable of crystallizing the amorphous Si thin films.
ISSN:2234-7593
2005-4602
DOI:10.1007/s12541-012-0075-6