Growth, chromium distribution and electrical properties of GaSe:Cr single crystals

The Cr-doped GaSe crystals have been grown by Bridgman method, and Cr effective segregation coefficient has been estimated as Keff = 0.027 ± 0.002. The upper limit of chromium content achieved in GaSe:Cr crystal is as low as Cs = 0.006 mass% as determined using atomic absorption spectroscopy (AAS)....

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Published inMaterials chemistry and physics Vol. 146; no. 1-2; pp. 12 - 17
Main Authors Atuchin, Victor V., Bereznaya, Svetlana A., Beisel, Nina F., Korotchenko, Zoya V., Kruchinin, Vladimir N., Pokrovsky, Lev D., Saprykin, Anatoly I., Sarkisov, Sergey Yu
Format Journal Article
LanguageEnglish
Published Elsevier B.V 15.07.2014
Subjects
Chemical techniques
Crystal growth
Electrical properties
Optical materials
Polarimeters and ellipsometers
Semiconductors
Crystal growth
Chemical techniques
Optical materials
Semiconductors
Electrical properties
Polarimeters and ellipsometers
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Summary:The Cr-doped GaSe crystals have been grown by Bridgman method, and Cr effective segregation coefficient has been estimated as Keff = 0.027 ± 0.002. The upper limit of chromium content achieved in GaSe:Cr crystal is as low as Cs = 0.006 mass% as determined using atomic absorption spectroscopy (AAS). Optical transparency range and dispersive optical constants of GaSe:Cr are similar to those in pure GaSe as obtained with optical spectrometry and spectroscopic ellipsometry (SE). The GaSe:Cr is a highly compensated p-type semiconductor with hole concentration p = 1 × 1015 cm−3 and carrier mobility μ = 15–30 cm2 V−1 s−1 at 300 K. [Display omitted] •Growth of GaSe:Cr crystal by Bridgman technique.•Determination of chromium solubility in GaSe:Cr crystal.•Electro-physical parameters of GaSe:Cr solid solution.
ISSN:0254-0584
1879-3312
DOI:10.1016/j.matchemphys.2014.02.013