A study of millimeter-wave GaAs IMPATT oscillator and amplifier noise
Noise characterization of a set of epitaxially grown p-n-junction GaAs IMPATTS that operate efficiently from 26-35 GHz is reported. In oscillator operation, the diodes exhibit an excess noise near the carrier, which follows a 1/ f dependence. Far from the carrier an AM DSB SNR of 134 dB in a 100-Hz...
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| Published in | IEEE transactions on electron devices Vol. 20; no. 6; pp. 517 - 521 |
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| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
IEEE
01.06.1973
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| Online Access | Get full text |
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| Summary: | Noise characterization of a set of epitaxially grown p-n-junction GaAs IMPATTS that operate efficiently from 26-35 GHz is reported. In oscillator operation, the diodes exhibit an excess noise near the carrier, which follows a 1/ f dependence. Far from the carrier an AM DSB SNR of 134 dB in a 100-Hz window and an FM noise measure of 36 dB are observed. As a reflection amplifier, a gain of 22 dB with a 250-MHz bandwidth and a noise figure of 25.5 dB is achieved. Under higher gain conditions (28-dB gain) a 24-dB figure is obtained. |
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| Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
| ISSN: | 0018-9383 1557-9646 |
| DOI: | 10.1109/T-ED.1973.17691 |