Study on Single Event Upset and Mitigation Technique in JLTFET‐Based 6T SRAM Cell

The effect of single event transient (SET) on 6T SRAM cell employing a 20 nm silicon‐based junctionless tunneling field effect transistor (JLTFET) is explored for the first time. JLTFET‐based SRAM circuit is designed using the look up table‐based Verilog A code obtained from TCAD values of the devic...

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Bibliographic Details
Published inJournal of Electrical and Computer Engineering Vol. 2024; no. 1
Main Authors K, Aishwarya, B, Lakshmi
Format Journal Article
LanguageEnglish
Published New York John Wiley & Sons, Inc 27.09.2024
Hindawi Limited
Subjects
Circuit design
Circuits
Current sources
Delay
Design
Error analysis
Field effect transistors
Lookup tables
Memory (Computers)
Methods
Performance measurement
Power consumption
Power management
Radiation
Radiation hardening
Random access memory
Recovery time
Semiconductor devices
Simulation
Single event upsets
Soft errors
Stability
Static random access memory
Transient current
Transistors
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Summary:The effect of single event transient (SET) on 6T SRAM cell employing a 20 nm silicon‐based junctionless tunneling field effect transistor (JLTFET) is explored for the first time. JLTFET‐based SRAM circuit is designed using the look up table‐based Verilog A code obtained from TCAD values of the device. After verifying SRAM circuit for its functionality, the stability parameters, read static noise margin (RSNM), write static noise margin (WSNM), read/write delay, and power consumption are evaluated. It is observed that the circuit has a good stability of noise margin and lesser delay. The radiation study is carried out using a transient current source striking at one of the output nodes. This causes single event upset (SEU) which changes the data stored in the memory cell giving rise to soft error (SER). SER is recovered by the radiation hardening by design (RHBD) technique with an additional RC network between two cross coupled inverters. The performance metrics, read/write delay, and the power consumption before, during, and after the radiation strike are analyzed. It is observed that SER gets totally eliminated with less recovery time at the expense of a slight increase in power and delay.
ISSN:2090-0147
2090-0155
DOI:10.1155/2024/9212078