Simulation of all-optical logic XNOR gate based on quantum-dot semiconductor optical amplifiers with amplified spontaneous emission

The performance of all-optical logic XNOR gate has been simulated. XNOR operation is realized by using Mach–Zehnder interferometer utilizing semiconductor optical amplifiers (SOAs) with quantum-dot (QD) active region. The study is carried out when the amplified spontaneous emission (ASE) is included...

Full description

Saved in:
Bibliographic Details
Published inOptical and quantum electronics Vol. 45; no. 11; pp. 1213 - 1221
Main Authors Kotb, A., Zoiros, K. E.
Format Journal Article
LanguageEnglish
Published Boston Springer US 01.11.2013
Subjects
Amplification
Characterization and Evaluation of Materials
Computer Communication Networks
Electrical Engineering
Lasers
Optical Devices
Optics
Photonics
Physics
Physics and Astronomy
Mach–Zehnder interferometer
Quantum-dot
Optical logic
XNOR gate
Semiconductor optical amplifier
Online AccessGet full text

Cover

More Information
Summary:The performance of all-optical logic XNOR gate has been simulated. XNOR operation is realized by using Mach–Zehnder interferometer utilizing semiconductor optical amplifiers (SOAs) with quantum-dot (QD) active region. The study is carried out when the amplified spontaneous emission (ASE) is included. Nonlinear dynamics including carrier heating and spectral hole-burning in the QD–SOA are taken into account together with the rate equations in order to realize the all-optical logic XNOR operation. Results show that the XNOR gate is capable of operating at data speed of 250 Gb/s with high output quality factor ( Q -factor). The dependence of the output Q -factor on signals and QD–SOAs parameters is also investigated and discussed.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0306-8919
1572-817X
DOI:10.1007/s11082-013-9742-9