Study of ethanolamine surface treatment on the metal-oxide electron transport layer in inverted InP quantum dot light-emitting diodes

• Published in: Electronic materials letters Vol. 11; no. 6; pp. 1066 - 1071
• Main Authors: Jang, Ilwan, Kim, Jiwan, Park, Chang Jun, Ippen, Christian, Greco, Tonino, Oh, Min Suk, Lee, Jeongno, Kim, Won Keun, Wedel, Armin, Han, Chul Jong, Park, Sung Kyu
• Format: Journal Article
• Language: English
• Published: Seoul The Korean Institute of Metals and Materials 01.11.2015; 대한금속·재료학회
• Subjects: Characterization and Evaluation of Materials; Chemistry and Materials Science; Condensed Matter Physics; Materials Science; Nanotechnology; Nanotechnology and Microengineering; Optical and Electronic Materials; 전자/정보통신공학; InP QDs; quantum dot light-emitting diode (QD-LED); ethanolamine; zinc oxide
• ISSN: 1738-8090; 2093-6788
• DOI: 10.1007/s13391-015-4420-7

The present work shows the effect of ethanolamine surface treatment on inverted InP quantum dot light-emitting diodes (QD-LEDs) with inorganic metal oxide layers. In the inverted structure of ITO/ZnO/InP QDs/CBP/MoO 3 /Al, a sol-gel derived ZnO film was used as an electron transport layer (ETL) and MoO 3 was used as a hole injection layer (HIL). First, ethanolamine was treated as a surface modifier on top of the ZnO electron transport layer. The optical performance of the QD-LED device was improved by the ethanolamine surface treatment. Second, low temperature annealing (<200°C) was performed on the ZnO sol-gel electron transport layer, followed by an investigation of the effect of the ZnO annealing temperature. The efficiency of the inverted QD-LEDs was significantly enhanced (more than 3-fold) by optimization of the ZnO annealing temperature.