Mode analysis and structure parameter optimization of a novel SiGe-OI rib optical waveguide

• Published in: Journal of semiconductors Vol. 30; no. 8; pp. 90 - 94
• Main Author: 冯松 高勇 杨媛 冯玉春
• Format: Journal Article
• Language: Chinese; English
• Published: IOP Publishing 01.08.2009
• Subjects: SiGe技术; 光束传播法; 光波导; 参数优化; 硅锗技术; 结构参数; 肋骨; 软件分析
• ISSN: 1674-4926
• DOI: 10.1088/1674-4926/30/8/084008

The mode of a novel SiGe-OI optical waveguide is analyzed, and its single-mode conditions are derived. The Ge content and structure parameters of SiGe-OI optical waveguides are respectively optimized. Under an operation wavelength of 1300 nm, the structures of SiGe-OI rib optical waveguides are built and analyzed with Optiwave software, and the optical field and transmission losses of the SiGe-OI rib optical waveguides are analyzed. The optimization results show that when the structure parameters H, h, W are respectively 500 nm, 250 nm, 500 nm and the Ge content is 5%, the total power loss of SiGe-OI rib waveguides is 0.3683 dB/cm considering the loss of radiation outside the waveguides and materials, which is less than the traditional value of 0.5 dB/cm. The analytical technique for SiGe-OI optical waveguides and structure parameters computed by this paper are proved to be accurate and computationally efficient compared with the beam propagation method （BPM） and the experimental results.