Photoluminescence of undoped InAs autoepitaxial layers

Photoluminescence (PL) properties of undoped InAs autoepitaxial layers are studied at various temperatures (9-120 K) and excitation power density (0.2-12.5 W cm2). The studied structures have been grown on highly doped n++-InAs substrates by chloride-hydride vapour phase epitaxy method. PL spectra m...

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Bibliographic Details
Published inJournal of physics. Conference series Vol. 643; no. 1; pp. 12051 - 12054
Main Authors Firsov, D D, Komkov, O S, Petrov, A S
Format Journal Article
LanguageEnglish
Published Bristol IOP Publishing 02.11.2015
Subjects
Carrier density
Excitons
FTIR spectrometers
Photoluminescence
Physics
Sodium sulfide
Substrates
Vapor phase epitaxy
Vapor phases
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Summary:Photoluminescence (PL) properties of undoped InAs autoepitaxial layers are studied at various temperatures (9-120 K) and excitation power density (0.2-12.5 W cm2). The studied structures have been grown on highly doped n++-InAs substrates by chloride-hydride vapour phase epitaxy method. PL spectra measurements were carried out with an FTIR spectrometer. The samples exhibit several luminescence peaks in the 2.9-3.3 μm range, which are attributed to free exciton transitions, deep donor bound excitons, and donor-acceptor pairs. A correlation is revealed between the PL intensity, and the background doping level of InAs epilayers - as supported by the free carrier concentration and mobility measurements, as well as SIMS data. A decrease of donor-bound exciton PL peak is observed for InAs sulfidized by Na2S.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/643/1/012051