Dielectric-Modulated Impact-Ionization MOS Transistor as a Label-Free Biosensor

In this letter, we propose a dielectric-modulated impact-ionization MOS (DIMOS) transistor-based sensor for application in label-free detection of biomolecules. Numerous reports exist on the experimental demonstration of nanogap-embedded field effect transistor-based biosensors, but an impact-ioniza...

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Bibliographic Details
Published inIEEE electron device letters Vol. 34; no. 12; pp. 1575 - 1577
Main Authors Kannan, N., Kumar, M. Jagadesh
Format Journal Article
LanguageEnglish
Published New York, NY IEEE 01.12.2013
Institute of Electrical and Electronics Engineers
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
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Summary:In this letter, we propose a dielectric-modulated impact-ionization MOS (DIMOS) transistor-based sensor for application in label-free detection of biomolecules. Numerous reports exist on the experimental demonstration of nanogap-embedded field effect transistor-based biosensors, but an impact-ionization MOS (I-MOS)-based biosensor has not been reported previously. The concept of a dielectric-modulated I-MOS-based biosensor is presented in this letter based on technology computer-aided design simulation study. The results show a high sensitivity to the presence of biomolecules even at small channel lengths. In addition, a low variability of the sensitivity to the charges on the biomolecule is observed. The high sensitivity, dominance of dielectric-modulation effects, and operation at even small channel lengths make the DIMOS biosensor a promising alternative for CMOS-based sensor applications.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2013.2283858