Dielectric-Modulated Impact-Ionization MOS Transistor as a Label-Free Biosensor
In this letter, we propose a dielectric-modulated impact-ionization MOS (DIMOS) transistor-based sensor for application in label-free detection of biomolecules. Numerous reports exist on the experimental demonstration of nanogap-embedded field effect transistor-based biosensors, but an impact-ioniza...
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Published in | IEEE electron device letters Vol. 34; no. 12; pp. 1575 - 1577 |
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Main Authors | , |
Format | Journal Article |
Language | English |
Published |
New York, NY
IEEE
01.12.2013
Institute of Electrical and Electronics Engineers The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subjects | |
Online Access | Get full text |
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Summary: | In this letter, we propose a dielectric-modulated impact-ionization MOS (DIMOS) transistor-based sensor for application in label-free detection of biomolecules. Numerous reports exist on the experimental demonstration of nanogap-embedded field effect transistor-based biosensors, but an impact-ionization MOS (I-MOS)-based biosensor has not been reported previously. The concept of a dielectric-modulated I-MOS-based biosensor is presented in this letter based on technology computer-aided design simulation study. The results show a high sensitivity to the presence of biomolecules even at small channel lengths. In addition, a low variability of the sensitivity to the charges on the biomolecule is observed. The high sensitivity, dominance of dielectric-modulation effects, and operation at even small channel lengths make the DIMOS biosensor a promising alternative for CMOS-based sensor applications. |
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ISSN: | 0741-3106 1558-0563 |
DOI: | 10.1109/LED.2013.2283858 |