Resistive-Gate Field-Effect Transistor: A Novel Steep-Slope Device Based on a Metal-Insulator-Metal-Oxide Gate Stack

• Published in: IEEE electron device letters Vol. 35; no. 8; pp. 877 - 879
• Main Authors: Huang, Qianqian, Huang, Ru, Pan, Yue, Tan, Shenghu, Wang, Yangyuan
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.08.2014; Institute of Electrical and Electronics Engineers; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Applied sciences; Electronics; Exact sciences and technology; Insulators; Logic gates; MOSFET; resistive switching; Resistive-gate field-effect transistor (ReFET); Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; steep-slope; subthreshold slope; Switches; Threshold voltage; Tin; Transistors; subthreshold slope; steep-slope; resistive switching; Resistive-gate field-effect transistor (ReFET); Voltage threshold; MOS technology; MOSFET; Dielectric materials; Transistor gate; Multiple layer; IV-VI compound; Switching; Optimization; Field effect transistor; Low voltage; Silicon oxides; n type semiconductor; Electrical conductivity transitions; Drain current; Silicon; Low-power electronics
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/LED.2014.2327219

A novel silicon-based resistive-gate field-effect transistor (ReFET) with metal-insulator-metal-oxide gate stack is proposed. With the abrupt resistance change event from high-resistance state to low-resistance state in the introduced insulator layer, the threshold voltage of ReFET can be suddenly decreased, resulting in an abrupt switching of drain current. The device is capable of sub-60-mV/decade subthreshold slope (SS), as well as MOSFET-comparable ON-current. The fabricated n-type ReFET device with Pt/TiN/TaO x /Poly-Si/SiO 2 gate stack can achieve steep SS of 8 mV/decade. With future materials and threshold voltage optimization, high I ON /I OFF ratio with reduced operation voltage can be expected, which shows that ReFET is a promising candidate for ultralow power applications.