Properties of epitaxial ZnO:P films

• Published in: Inorganic materials Vol. 49; no. 3; pp. 272 - 277
• Main Authors: Rogozin, I. V., Georgobiani, A. N., Kotlyarevsky, M. B., Demin, V. I.
• Format: Journal Article
• Language: English
• Published: Dordrecht SP MAIK Nauka/Interperiodica 01.03.2013
• Subjects: Chemistry; Chemistry and Materials Science; Diffraction; Electrical resistivity; Epitaxy; Excitation spectra; Hall effect; Industrial Chemistry/Chemical Engineering; Inorganic Chemistry; Materials Science; Photoluminescence; Spectra; X-rays; Neutral Acceptor; Hall Effect Measurement; Room Temperature Hall Effect; Zinc Vacancy; Shallow Acceptor
• ISSN: 0020-1685; 1608-3172
• DOI: 10.1134/S0020168513030175

Epitaxial ZnO:P films have been produced by annealing ZnP 2 substrates in atomic oxygen and characterized by X-ray diffraction, atomic force microscopy, Hall effect measurements, X-ray photoelectron spectroscopy, and photoluminescence measurements. The X-ray diffraction patterns of the films showed the 002 peak, indicating that their c axis was normal to the substrate surface. According to the Hall effect data, the layers were p-type, with a resistivity of ∼20 Ω cm, hole mobility of ∼9 cm 2 /(V s), and hole concentration of ∼7.8 × 10 17 cm −3 . The photoluminescence spectra of the ZnO:P films showed a peak at 3.356 eV (neutral acceptor bound exciton). Our results indicate that the ZnO:P films contain the P Zn -2V Zn defect complex as a shallow acceptor responsible for their p -type conductivity.