Properties of epitaxial ZnO:P films
Epitaxial ZnO:P films have been produced by annealing ZnP 2 substrates in atomic oxygen and characterized by X-ray diffraction, atomic force microscopy, Hall effect measurements, X-ray photoelectron spectroscopy, and photoluminescence measurements. The X-ray diffraction patterns of the films showed...
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Published in | Inorganic materials Vol. 49; no. 3; pp. 272 - 277 |
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Main Authors | , , , |
Format | Journal Article |
Language | English |
Published |
Dordrecht
SP MAIK Nauka/Interperiodica
01.03.2013
|
Subjects | |
Online Access | Get full text |
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Summary: | Epitaxial ZnO:P films have been produced by annealing ZnP
2
substrates in atomic oxygen and characterized by X-ray diffraction, atomic force microscopy, Hall effect measurements, X-ray photoelectron spectroscopy, and photoluminescence measurements. The X-ray diffraction patterns of the films showed the 002 peak, indicating that their c axis was normal to the substrate surface. According to the Hall effect data, the layers were p-type, with a resistivity of ∼20 Ω cm, hole mobility of ∼9 cm
2
/(V s), and hole concentration of ∼7.8 × 10
17
cm
−3
. The photoluminescence spectra of the ZnO:P films showed a peak at 3.356 eV (neutral acceptor bound exciton). Our results indicate that the ZnO:P films contain the P
Zn
-2V
Zn
defect complex as a shallow acceptor responsible for their
p
-type conductivity. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 0020-1685 1608-3172 |
DOI: | 10.1134/S0020168513030175 |