Structural and electroluminescent properties of n-ZnO/p-GaN:Mg heterojunctions

n -ZnO/ p -GaN:Mg heterostructures have been produced by the thermal oxidation of thin Zn layers using radical-beam gettering epitaxy. The structural and electroluminescent properties of the n -ZnO/ p -GaN:Mg heterostructures have been studied.

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Bibliographic Details
Published inInorganic materials Vol. 46; no. 11; pp. 1161 - 1165
Main Authors Rogozin, I. V., Georgobiani, A. N., Kotlyarevsky, M. B., Datskevich, N. P.
Format Journal Article
LanguageEnglish
Published Dordrecht SP MAIK Nauka/Interperiodica 01.11.2010
Subjects
Chemistry
Chemistry and Materials Science
Electroluminescence
Epitaxy
Gettering
Heterojunctions
Heterostructures
Industrial Chemistry/Chemical Engineering
Inorganic Chemistry
Inorganic materials
Materials Science
Thin films
Zinc
Light Emit Diode
Energy Band Diagram
Anderson Model
Nitrogen Vacancy
Electroluminescent Property
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Summary:n -ZnO/ p -GaN:Mg heterostructures have been produced by the thermal oxidation of thin Zn layers using radical-beam gettering epitaxy. The structural and electroluminescent properties of the n -ZnO/ p -GaN:Mg heterostructures have been studied.
Bibliography:ObjectType-Article-1
SourceType-Scholarly Journals-1
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ISSN:0020-1685
1608-3172
DOI:10.1134/S0020168510110014