Structural and electroluminescent properties of n-ZnO/p-GaN:Mg heterojunctions
n -ZnO/ p -GaN:Mg heterostructures have been produced by the thermal oxidation of thin Zn layers using radical-beam gettering epitaxy. The structural and electroluminescent properties of the n -ZnO/ p -GaN:Mg heterostructures have been studied.
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Published in | Inorganic materials Vol. 46; no. 11; pp. 1161 - 1165 |
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Main Authors | , , , |
Format | Journal Article |
Language | English |
Published |
Dordrecht
SP MAIK Nauka/Interperiodica
01.11.2010
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Subjects | |
Online Access | Get full text |
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Summary: | n
-ZnO/
p
-GaN:Mg heterostructures have been produced by the thermal oxidation of thin Zn layers using radical-beam gettering epitaxy. The structural and electroluminescent properties of the
n
-ZnO/
p
-GaN:Mg heterostructures have been studied. |
---|---|
Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
ISSN: | 0020-1685 1608-3172 |
DOI: | 10.1134/S0020168510110014 |