Fabrication and photoelectrical characteristics of ZnO nanowire field-effect transistors
The fabrication and photoelectrical characteristics of suspended ZnO nanowire （NW） field-effect transistors （FETs） are presented. Single-crystal ZnO NWs are synthesized by a hydrothermal method. The fabricated FETs exhibit excellent performance. When Vds=2.5 V, the peak transconductance of the FETs...
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| Published in | Journal of semiconductors Vol. 30; no. 8; pp. 60 - 62 |
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| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
IOP Publishing
01.08.2009
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| Subjects | |
| Online Access | Get full text |
| ISSN | 1674-4926 |
| DOI | 10.1088/1674-4926/30/8/084002 |
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| Abstract | The fabrication and photoelectrical characteristics of suspended ZnO nanowire （NW） field-effect transistors （FETs） are presented. Single-crystal ZnO NWs are synthesized by a hydrothermal method. The fabricated FETs exhibit excellent performance. When Vds=2.5 V, the peak transconductance of the FETs is 0.396 μS, the average electron mobility is 50.17 cm2/（V·s）, the resistivity is 0.96 × 102 Ω·cm at Vgs = 0 V, and the current on/off ratio （Ion/Ioff） is approximately 105. ZnO NW-FET devices exposed to ultraviolet radiation （2.5 μW/cm2） exhibit punch-through and threshold voltage （Vth） shift （from-0.6 V to ＋0.7 V） and a decrease by almost half of the source-drain current （Ids, from 560 nA to 320 nA） due to drain-induced barrier lowering. Continued work is underway to reveal the intrinsic properties of suspended ZnO nanowires and to explore their device applications. |
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| AbstractList | The fabrication and photoelectrical characteristics of suspended ZnO nanowire （NW） field-effect transistors （FETs） are presented. Single-crystal ZnO NWs are synthesized by a hydrothermal method. The fabricated FETs exhibit excellent performance. When Vds=2.5 V, the peak transconductance of the FETs is 0.396 μS, the average electron mobility is 50.17 cm2/（V·s）, the resistivity is 0.96 × 102 Ω·cm at Vgs = 0 V, and the current on/off ratio （Ion/Ioff） is approximately 105. ZnO NW-FET devices exposed to ultraviolet radiation （2.5 μW/cm2） exhibit punch-through and threshold voltage （Vth） shift （from-0.6 V to ＋0.7 V） and a decrease by almost half of the source-drain current （Ids, from 560 nA to 320 nA） due to drain-induced barrier lowering. Continued work is underway to reveal the intrinsic properties of suspended ZnO nanowires and to explore their device applications. |
| Author | 付晓君 张海英 郭常新 徐静波 黎明 |
| AuthorAffiliation | Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China Department of Physics, University of Science and Technology of China, Hefei 230026, China |
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| Cites_doi | 10.1021/nl015667d 10.1002/adma.200400765 10.1063/1.1821648 10.1063/1.1840116 10.1002/1521-4095(20020205)14:3<215::AID-ADMA215>3.0.CO;2-J 10.1063/1.1811383 10.1143/JJAP.46.6230 10.1063/1.1794351 10.7498/aps.56.2399 10.1021/nl049461z 10.1038/nmat1014 |
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| Notes | ultraviolet radiation O484.4 TN386 ZnO nanowire; back-gate; suspended; field-effect transistor; ultraviolet radiation ZnO nanowire field-effect transistor 11-5781/TN suspended back-gate |
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| Snippet | The fabrication and photoelectrical characteristics of suspended ZnO nanowire （NW） field-effect transistors （FETs） are presented. Single-crystal ZnO NWs are... |
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| SubjectTerms | 光电特性 制备 场效应晶体管 场效应管 弗吉尼亚州 氧化锌 水热法合成 纳米线 |
| Title | Fabrication and photoelectrical characteristics of ZnO nanowire field-effect transistors |
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