Fabrication and photoelectrical characteristics of ZnO nanowire field-effect transistors

• Published in: Journal of semiconductors Vol. 30; no. 8; pp. 60 - 62
• Main Author: 付晓君 张海英 郭常新 徐静波 黎明
• Format: Journal Article
• Language: English
• Published: IOP Publishing 01.08.2009
• Subjects: 光电特性; 制备; 场效应晶体管; 场效应管; 弗吉尼亚州; 氧化锌; 水热法合成; 纳米线
• ISSN: 1674-4926
• DOI: 10.1088/1674-4926/30/8/084002

The fabrication and photoelectrical characteristics of suspended ZnO nanowire （NW） field-effect transistors （FETs） are presented. Single-crystal ZnO NWs are synthesized by a hydrothermal method. The fabricated FETs exhibit excellent performance. When Vds=2.5 V, the peak transconductance of the FETs is 0.396 μS, the average electron mobility is 50.17 cm2/（V·s）, the resistivity is 0.96 × 102 Ω·cm at Vgs = 0 V, and the current on/off ratio （Ion/Ioff） is approximately 105. ZnO NW-FET devices exposed to ultraviolet radiation （2.5 μW/cm2） exhibit punch-through and threshold voltage （Vth） shift （from-0.6 V to ＋0.7 V） and a decrease by almost half of the source-drain current （Ids, from 560 nA to 320 nA） due to drain-induced barrier lowering. Continued work is underway to reveal the intrinsic properties of suspended ZnO nanowires and to explore their device applications.