Activation of p-type conduction in ZnO:N films by annealing in atomic oxygen

• Published in: Inorganic materials Vol. 49; no. 6; pp. 568 - 571
• Main Authors: Rogozin, I. V., Georgobiani, A. N., Kotlyarevsky, M. B., Demin, V. I., Lepnev, L. S.
• Format: Journal Article
• Language: English
• Published: Dordrecht SP MAIK Nauka/Interperiodica 01.06.2013
• Subjects: Annealing; Atomic oxygen; Chemistry; Chemistry and Materials Science; Diffraction; Electrical properties; Electrical resistivity; Epitaxial growth; Industrial Chemistry/Chemical Engineering; Inorganic Chemistry; Materials Science; Photoelectron spectroscopy; X-rays; Reactive Magnetron Sputtering; Hall Effect Measurement; ZnSe; Hole Mobility; ZnTe
• ISSN: 0020-1685; 1608-3172
• DOI: 10.1134/S0020168513050130

ZnO:N epitaxial films have been grown by reactive magnetron sputtering. The effect of annealing in atomic oxygen on the structural and electrical properties of the ZnO:N films has been studied by X-ray diffraction, atomic force microscopy, Hall effect measurements, and X-ray photoelectron spectroscopy. By annealing at temperatures from 500 to 700°C, we have obtained p -type ZnO:N films with a resistivity of ∼57 Ω cm, hole mobility of ∼2.7 cm 2 /(V s), and hole concentration of ∼6.8 × 10 17 cm −3 . X-ray photoelectron spectroscopy results suggest that the p -type conductivity of the films is due to a decrease in the concentration of (N 2 ) O and V O donors.