Activation of p-type conduction in ZnO:N films by annealing in atomic oxygen
ZnO:N epitaxial films have been grown by reactive magnetron sputtering. The effect of annealing in atomic oxygen on the structural and electrical properties of the ZnO:N films has been studied by X-ray diffraction, atomic force microscopy, Hall effect measurements, and X-ray photoelectron spectrosco...
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Published in | Inorganic materials Vol. 49; no. 6; pp. 568 - 571 |
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Main Authors | , , , , |
Format | Journal Article |
Language | English |
Published |
Dordrecht
SP MAIK Nauka/Interperiodica
01.06.2013
|
Subjects | |
Online Access | Get full text |
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Summary: | ZnO:N epitaxial films have been grown by reactive magnetron sputtering. The effect of annealing in atomic oxygen on the structural and electrical properties of the ZnO:N films has been studied by X-ray diffraction, atomic force microscopy, Hall effect measurements, and X-ray photoelectron spectroscopy. By annealing at temperatures from 500 to 700°C, we have obtained
p
-type ZnO:N films with a resistivity of ∼57 Ω cm, hole mobility of ∼2.7 cm
2
/(V s), and hole concentration of ∼6.8 × 10
17
cm
−3
. X-ray photoelectron spectroscopy results suggest that the
p
-type conductivity of the films is due to a decrease in the concentration of (N
2
)
O
and
V
O
donors. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 0020-1685 1608-3172 |
DOI: | 10.1134/S0020168513050130 |