Siliconization of titanium oxycarbides by silicon monoxide

Siliconization of titanium oxycarbides TiC x O y by gaseous SiO at 1350°C was studied. The reaction source of SiO was a powder mixture of silicon and silicon dioxide. It was found that the main siliconization product is Ti 5 Si 3 and the siliconization of high-carbon ( x > 0.70) oxycarbides also...

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Bibliographic Details
Published inRussian journal of inorganic chemistry Vol. 58; no. 6; pp. 624 - 630
Main Authors Istomina, E. I., Istomin, P. V., Nadutkin, A. V.
Format Journal Article
LanguageEnglish
Published Dordrecht SP MAIK Nauka/Interperiodica 01.06.2013
Subjects
Chemistry
Chemistry and Materials Science
Inorganic Chemistry
Oxycarbides
Silicon
Silicon dioxide
Synthesis and Properties of Inorganic Compounds
Titanium
Titanium carbide
Titanium Carbide
Siliconization Product
Sili Conization
Titanium Silicide
Titanium Oxycarbides
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Summary:Siliconization of titanium oxycarbides TiC x O y by gaseous SiO at 1350°C was studied. The reaction source of SiO was a powder mixture of silicon and silicon dioxide. It was found that the main siliconization product is Ti 5 Si 3 and the siliconization of high-carbon ( x > 0.70) oxycarbides also gives Ti 3 SiC 2 and TiSi 2 .
Bibliography:ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:0036-0236
1531-8613
DOI:10.1134/S0036023613060119