Spectrum of hot-electron luminescence from high electron mobility transistors

GaAs and InGaAs high electron mobility transistors (HEMTs) have been found to emit visible and infrared radiation when subject to high drain/source biases. This luminescence has been studied and analyzed spectrally; there appear to be components due to electron indirect intraband transitions, in add...

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Bibliographic Details
Published inApplied physics letters Vol. 59; no. 18; pp. 2257 - 2259
Main Authors Zappe, Hans P., As, D. J.
Format Journal Article
LanguageEnglish
Published Melville, NY American Institute of Physics 28.10.1991
Subjects
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Gallium Arsenides
High electron mobility transistor
Light emission
Semiconductor materials
Indium Gallium Arsenides Mixed
Luminescence
Visible radiation
Infrared radiation
Hot electron
Micrography
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Summary:GaAs and InGaAs high electron mobility transistors (HEMTs) have been found to emit visible and infrared radiation when subject to high drain/source biases. This luminescence has been studied and analyzed spectrally; there appear to be components due to electron indirect intraband transitions, in addition to recombination in various layers of the HEMT. The distinct recombination peaks indicate that carriers are distributed vertically in the transistor; the relative strength of luminescence at particular energies may provide indications of the relative carrier densities. This electroluminescence spectrum strongly suggests that real-space transfer may be significant in HEMTs.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.106089