Synaptic behaviors and modeling of a metal oxide memristive device
Nanoscale memristive devices using tungsten oxide as the switching layer have been fabricated and characterized. The devices show the characteristics of a flux-controlled memristor such that the conductance change is governed by the history of the applied voltage signals, leading to synaptic behavio...
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Published in | Applied physics. A, Materials science & processing Vol. 102; no. 4; pp. 857 - 863 |
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Main Authors | , , , , , |
Format | Journal Article |
Language | English |
Published |
Berlin/Heidelberg
Springer-Verlag
01.03.2011
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Subjects | |
Online Access | Get full text |
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Summary: | Nanoscale memristive devices using tungsten oxide as the switching layer have been fabricated and characterized. The devices show the characteristics of a flux-controlled memristor such that the conductance change is governed by the history of the applied voltage signals, leading to synaptic behaviors including long-term potentiation and depression. The memristive behavior is attributed to the migration of oxygen vacancies upon bias which modulates the interplay between Schottky barrier emission and tunneling at the WO
X
/electrode interface. A physical model incorporating ion drift and diffusion effects using an internal state variable representing the area of the conductive region has been proposed to explain the observed memristive behaviors. A SPICE model has been further developed that can be directly incorporated into existing circuit simulators. This type of device can be fabricated with low-temperature processes and has potential applications in synaptic computations and as analog circuit components. |
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Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
ISSN: | 0947-8396 1432-0630 |
DOI: | 10.1007/s00339-011-6296-1 |