InP-based deep-ridge NPN transistor laser

We report an InP-based deep-ridge NPN transistor laser (TL, λ∼1.5 μm). By placing the quantum well (QW) active material above the heavily Zn-doped base layer, both the optical absorption of the heavily p-doped base material and the damage of the quality of the QWs resulted from the Zn diffusion into...

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Bibliographic Details
Published inOptics letters Vol. 36; no. 16; p. 3206
Main Authors Liang, S, Kong, D H, Zhu, H L, Zhao, L J, Pan, J Q, Wang, W
Format Journal Article
LanguageEnglish
Published United States 15.08.2011
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Summary:We report an InP-based deep-ridge NPN transistor laser (TL, λ∼1.5 μm). By placing the quantum well (QW) active material above the heavily Zn-doped base layer, both the optical absorption of the heavily p-doped base material and the damage of the quality of the QWs resulted from the Zn diffusion into the QWs are decreased greatly. CW operation of the TL is achieved at -40 °C, which is much better than the shallow-ridge InP-based NPN TL. With future optimization of the growth procedure, significant improvement of the performance of the deep-ridge InP-based NPN TLs is expected.
ISSN:1539-4794
DOI:10.1364/OL.36.003206