Properties of CdSe single crystals activated with selenium by ion implantation

Selenium ion implantation has been used to produce p -type layers on cadmium selenide single crystals. Their conductivity is governed by acceptor levels at E ν + 0.05 eV and E ν + 0.32 eV, due to native point defects in the ion-implanted layer.

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Bibliographic Details
Published inInorganic materials Vol. 45; no. 6; pp. 606 - 610
Main Authors Georgobiani, A. N., Levonovich, B. N.
Format Journal Article
LanguageEnglish
Published Dordrecht SP MAIK Nauka/Interperiodica 01.06.2009
Subjects
Activated
Cadmium selenides
Chemistry
Chemistry and Materials Science
Industrial Chemistry/Chemical Engineering
Inorganic Chemistry
Inorganic materials
Intermetallics
Ion implantation
Materials Science
Point defects
Selenium
Single crystals
Atomic Chalcogen
Edge Emission
Cadmium Selenide
Selenium
Chalcogen
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Summary:Selenium ion implantation has been used to produce p -type layers on cadmium selenide single crystals. Their conductivity is governed by acceptor levels at E ν + 0.05 eV and E ν + 0.32 eV, due to native point defects in the ion-implanted layer.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0020-1685
1608-3172
DOI:10.1134/S0020168509060053