Advances in Linear Modeling of Microwave Transistors
Heterojunction field effect transistors (HFET) based on gallium nitride (AlGaN/GaN) and metal semiconductor field effect transistors (MESFETs) based on silicon carbide (SiC) are the preferred transistors for high-power amplifier circuit designs rather than MESFETs, high electron mobility transistors...
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Published in | IEEE microwave magazine Vol. 10; no. 2; pp. 100, 102 - 111, 146 |
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Main Authors | , , , , , |
Format | Magazine Article |
Language | English |
Published |
New York
IEEE
01.04.2009
The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subjects | |
Online Access | Get full text |
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Summary: | Heterojunction field effect transistors (HFET) based on gallium nitride (AlGaN/GaN) and metal semiconductor field effect transistors (MESFETs) based on silicon carbide (SiC) are the preferred transistors for high-power amplifier circuit designs rather than MESFETs, high electron mobility transistors (HEMTs) and pseudomorphic HEMTs based on gallium arsenide (GaAs) or indium phosphide (InP) semiconductor technology. While AlGaN/GaN and SiC are good candidates for high-power applications, GaAs and InP semiconductor technologies are the preferred transistors in low-power, low-voltage, and low-noise applications [1]. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 1527-3342 1557-9581 |
DOI: | 10.1109/MMM.2008.931675 |