Advances in Linear Modeling of Microwave Transistors

Heterojunction field effect transistors (HFET) based on gallium nitride (AlGaN/GaN) and metal semiconductor field effect transistors (MESFETs) based on silicon carbide (SiC) are the preferred transistors for high-power amplifier circuit designs rather than MESFETs, high electron mobility transistors...

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Bibliographic Details
Published inIEEE microwave magazine Vol. 10; no. 2; pp. 100, 102 - 111, 146
Main Authors Zarate-de Landa, A., Zuniga-Juarez, J., Loo-Yau, J., Reynoso-Hernandez, J., Maya-Sanchez, M., del Valle-Padilla, J.
Format Magazine Article
LanguageEnglish
Published New York IEEE 01.04.2009
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Aluminum gallium nitride
Gallium arsenide
Gallium nitride
HEMTs
High electron mobility transistors
Indium phosphide
Indium phosphides
MESFETs
Microwave FETs
Microwave transistors
Microwaves
MODFETs
Semiconductor devices
Semiconductors
Silicon carbide
Transistors
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Summary:Heterojunction field effect transistors (HFET) based on gallium nitride (AlGaN/GaN) and metal semiconductor field effect transistors (MESFETs) based on silicon carbide (SiC) are the preferred transistors for high-power amplifier circuit designs rather than MESFETs, high electron mobility transistors (HEMTs) and pseudomorphic HEMTs based on gallium arsenide (GaAs) or indium phosphide (InP) semiconductor technology. While AlGaN/GaN and SiC are good candidates for high-power applications, GaAs and InP semiconductor technologies are the preferred transistors in low-power, low-voltage, and low-noise applications [1].
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
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ISSN:1527-3342
1557-9581
DOI:10.1109/MMM.2008.931675