Theoretical investigations of [110] IV-VI lead salt edge-emitting lasers

• Published in: IEEE journal of quantum electronics Vol. 41; no. 3; pp. 308 - 315
• Main Authors: Xiaoliang Lu, Xiaoliang Lu, Zhisheng Shi, Zhisheng Shi
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.03.2005; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Augers; Differential equations; Holes; IV-VI lead salt; Laser modes; Laser theory; Lasers; Mathematical analysis; mid-IR lasers; Optical coupling; Orientation; Power generation; Power lasers; Quantum well lasers; Quantum wells; Radiative recombination; Reflectivity; semiconductor lasers; Simulation; Temperature
• ISSN: 0018-9197; 1558-1713
• DOI: 10.1109/JQE.2004.841607

Theoretical simulations on a new [110]-orientated IV-VI lead-salt midinfrared (IR) edge-emitting laser are performed in comparison with the conventional [100] orientated laser. The modal gain of quantum-well (QW) structure on [110] orientation is significantly higher than that on the [100] orientation. Light versus current (L-I) characteristics at different operation temperatures are simulated by solving the coupled rate equations. The maximum operation temperature of [110] laser is 70 degree higher than that of conventional [100] laser. To further improve the laser performance a new Si/sub 3/N/sub 4/ clad laser structure is proposed to improve the heat dissipation. The effects of other parameters on the performance of the lasers, such as Auger recombination, Schockley-Read recombination, facet reflectivity and cavity length, are also investigated. The simulated results show that with optimized laser structure and modestly reduced Auger recombination [110] IV-VI lead-salt edge-emitting laser could produce output power of about 10 mW at room temperature.