Tri-Gate Normally-Off GaN Power MISFET

• Published in: IEEE electron device letters Vol. 33; no. 3; pp. 360 - 362
• Main Authors: Bin Lu, Matioli, E., Palacios, T.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.03.2012; Institute of Electrical and Electronics Engineers
• Subjects: Aluminum gallium nitride; Applied sciences; Electrical engineering. Electrical power engineering; Electronic equipment and fabrication. Passive components, printed wiring boards, connectics; Electronics; Exact sciences and technology; Gallium nitride; GaN transistor; HEMTs; Leakage current; Logic gates; MISFETs; normally-off; power electronics; Power electronics, power supplies; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Transistors; tri-gate; Voltage threshold; Binary compound; normally-off; Transistor gate; tri-gate; Power electronics; GaN transistor; Gallium nitride; III-V compound; MISFET; Disruptive voltage; Drain current; Leakage current; On off effect
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/LED.2011.2179971

We present a new normally-off GaN transistor-the tri-gate normally-off GaN metal-insulator-semiconductor field- effect transistor (MISFET). Due to the excellent channel control of a new 3-D gate structure, a breakdown voltage of 565 V has been achieved at a drain leakage current of 0.6 μA/mm and V gs = 0. The new device has an on/off current ratio of more than eight orders of magnitude and a subthreshold slope of 86 ± 9 mV/decade. The threshold voltage of the new device is 0.80 ± 0.06 V with a maximum drain current of 530 mA/mm. These results confirm the great potential of the tri-gate normally-off GaN-on-Si MISFETs for the next generation of power electronics.