p-n junctions in ZnO implanted with group V ions

• Published in: Inorganic materials Vol. 46; no. 9; pp. 948 - 952
• Main Authors: Rogozin, I. V., Georgobiani, A. N., Kotlyarevsky, M. B., Demin, V. I., Marakhovskii, A. V.
• Format: Journal Article
• Language: English
• Published: Dordrecht SP MAIK Nauka/Interperiodica 01.09.2010
• Subjects: Annealing; Band spectra; Carrier mobility; Chemistry; Chemistry and Materials Science; Electrical resistivity; Electroluminescence; Halls; Industrial Chemistry/Chemical Engineering; Inorganic Chemistry; Materials Science; P-n junctions; Spectra; Hall Effect Measurement; Dominant Acceptor; Blue Green Laser Diode; ZnSe; Forward Bias Voltage
• ISSN: 0020-1685; 1608-3172
• DOI: 10.1134/S0020168510090050

n -Type ZnO〈Ga〉 films were implanted with 150-keV N + (As + ) ions to a dose of 7 × 10 15 cm −2 and then annealed in atomic oxygen at different temperatures. p -Type conductivity was obtained at annealing temperatures in the range 770–870 K. The parameters of the p -type layers were determined by photoluminescence spectroscopy, secondary ion mass spectrometry, and Hall effect measurements. According to the Hall data, the p -type layers had a resistivity of ∼30 Ω cm, carrier mobility of ∼2 cm 2 /(V s), and carrier concentration of ∼10 18 cm −3 . The electroluminescence spectra of the p-n junctions produced by ion implantation showed a band at 440 nm, due to recombination via donor-acceptor pairs.