p-n junctions in ZnO implanted with group V ions
n -Type ZnO〈Ga〉 films were implanted with 150-keV N + (As + ) ions to a dose of 7 × 10 15 cm −2 and then annealed in atomic oxygen at different temperatures. p -Type conductivity was obtained at annealing temperatures in the range 770–870 K. The parameters of the p -type layers were determined by ph...
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Published in | Inorganic materials Vol. 46; no. 9; pp. 948 - 952 |
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Main Authors | , , , , |
Format | Journal Article |
Language | English |
Published |
Dordrecht
SP MAIK Nauka/Interperiodica
01.09.2010
|
Subjects | |
Online Access | Get full text |
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Summary: | n
-Type ZnO〈Ga〉 films were implanted with 150-keV N
+
(As
+
) ions to a dose of 7 × 10
15
cm
−2
and then annealed in atomic oxygen at different temperatures.
p
-Type conductivity was obtained at annealing temperatures in the range 770–870 K. The parameters of the
p
-type layers were determined by photoluminescence spectroscopy, secondary ion mass spectrometry, and Hall effect measurements. According to the Hall data, the
p
-type layers had a resistivity of ∼30 Ω cm, carrier mobility of ∼2 cm
2
/(V s), and carrier concentration of ∼10
18
cm
−3
. The electroluminescence spectra of the
p-n
junctions produced by ion implantation showed a band at 440 nm, due to recombination via donor-acceptor pairs. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 0020-1685 1608-3172 |
DOI: | 10.1134/S0020168510090050 |