Defect formation in silicon at a mask edge during crystallization of an amorphous implantation layer

• Published in: Journal of applied physics Vol. 66; no. 10; pp. 4723 - 4728
• Main Authors: CERVA, H, KÜSTERS, K.-H
• Format: Journal Article
• Language: English
• Published: Woodbury, NY American Institute of Physics 15.11.1989
• Subjects: Condensed matter: structure, mechanical and thermal properties; Exact sciences and technology; Physics; Solid surfaces and solid-solid interfaces; Surface and interface dynamics and vibrations; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology; Non metal; Crystal twin; Ion implantation; Annealing; Semiconductor materials; Cross section; Epitaxy; Solid solid interface; Crystallization; Microdefect; Amorphous state; Experimental study; Arsenic Atomic ions; Thin film; Dislocation; Transmission electron microscopy; Silicon
• ISSN: 0021-8979; 1089-7550
• DOI: 10.1063/1.343832

Implantation defects under a mask edge were studied by cross-sectional transmission electron microscopy. An arsenic implantation with a dose of 5×1015 cm−2 as used for source/drain implantations in metal-oxide-semiconductor transistor structures completely amorphizes a 63-nm-thick silicon surface layer and produces a sharply curved amorphous/crystalline interface under the mask edge. Annealing at 900 °C results in the formation of vacancy-type dislocation half-loops or microtwinning on {111} planes under the mask edge. Partial crystallization of the amorphous layer at 500 °C revealed a notch in the amorphous/crystalline interface which is shown to be due to the different epitaxial regrowth rates on the various lattice planes. On further annealing, the above-mentioned defects are generated when the crystallization fronts on both sides of the notch join.