SEUs Induced by Thermal to High-Energy Neutrons in SRAMs

We report on experimental SEU studies using thermal and high-energy neutrons, conducted at the TRIUMF facility, Vancouver. Different SRAM samples were used and many samples showed to be highly susceptible to thermal neutrons. Moreover, a considerable part of the total SEU-rate, at high altitudes as...

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Bibliographic Details
Published inIEEE transactions on nuclear science Vol. 53; no. 6; pp. 3798 - 3802
Main Authors Granlund, T., Olsson, N.
Format Journal Article
LanguageEnglish
Published New York IEEE 01.12.2006
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Aerospace electronics
Devices
High altitude
Manufacturing
Mesons
Neutrons
Particle beams
Protons
Random access memory
Sea level
Semiconductor device radiation effects
semiconductor device reliability
semiconductor device testing
semiconductor memories
Shape measurement
Single event transient
Static random access memory
Testing
Thermal neutrons
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Summary:We report on experimental SEU studies using thermal and high-energy neutrons, conducted at the TRIUMF facility, Vancouver. Different SRAM samples were used and many samples showed to be highly susceptible to thermal neutrons. Moreover, a considerable part of the total SEU-rate, at high altitudes as well as down at sea level, may be attributed to thermal neutrons for RAM based devices
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2006.880930