Selective growth of carbon nanotube on silicon substrates

• Published in: Transactions of Nonferrous Metals Society of China Vol. 16; no. B01; pp. 377 - 380
• Main Author: 邹小平 H．ABE T. SHIMIZU A. ANDO H. TOKUMOTO 朱申敏 周豪慎
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01.06.2006; Nanotechnology Research Center, Research Institute for Electronic Science,Hokkaido University, Sapporo 001-0021, Japan%Energy Electronics Research Institute, National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibalaki 305-8568, Japan; Nanotechnology Research Institute, National Institute of Advanced Industrial Science and Technology, 1-1-1 Higashi, Tsukuba, Ibalaki 305-8562, Japan; Energy Electronics Research Institute, National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibalaki 305-8568, Japan%Nanotechnology Research Institute, National Institute of Advanced Industrial Science and Technology, 1-1-1 Higashi, Tsukuba, Ibalaki 305-8562, Japan%Nano-electronics Research Institute, National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibalaki 305-8568, Japan%Nanotechnology Research Institute, National Institute of Advanced Industrial Science and Technology, 1-1-1 Higashi, Tsukuba, Ibalaki 305-8562, Japan; Beijing Key Laboratory for Sensor, Beijing 100101, China; Research Center for Sensor Technology, Beijing Information Technology Institute, Beijing 100101, China
• Subjects: carbon nanotubes; locally-ordered pattern; silicon substrate; STCVD; trench-patterned; 硅衬底; 碳纳米管; 选择性生长; STCVD; locally-ordered pattern; carbon nanotubes; trench-patterned; silicon substrate
• ISSN: 1003-6326
• DOI: 10.1016/S1003-6326(06)60214-8

The carbon nanotube （CNT） growth of iron oxide-deposited trench-patterns and the locally-ordered CNT arrays on silicon substrate were achieved by simple thermal chemical vapor deposition（STCVD） of ethanol vapor. The CNTs were uniformly synthesized with good selectivity on trench-patterned silicon substrates. This fabrication process is compatible with currently used semiconductor-processing technologies, and the carbon-nanotube fabrication process can be widely applied for the development of electronic devices using carbon-nanotube field emitters as cold cathodes and can revolutionize the area of field-emitting electronic devices. The site-selective growth of CNT from an iron oxide nanoparticle catalyst patterned were also achieved by drying-mediated self-assembly technique. The present method offers a simple and cost-effective method to grow carbon nanotubes with self-assembled patterns.