Simple calculation of the Hall coefficient of thin metal films

A relationship is analytically defined between the Hall coefficient and the product of the resistivity and the temperature coefficient of a thin metal film. Attention is given to the electrical characteristics of the metal film in terms of the true electron path in a Larmor orbit, the scattering pro...

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Bibliographic Details
Published inJournal of materials science letters Vol. 4; no. 5; pp. 585 - 588
Main Authors TOSSER, A. J, PICHARD, C. R, LAHRICHI, M, BEDDA, M
Format Journal Article
LanguageEnglish
Published Dordrecht Kluwer Academic Publishers 01.05.1985
Subjects
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Cross-disciplinary physics: materials science; rheology
Electronic conduction in metals and alloys
Electronic transport in condensed matter
Exact sciences and technology
Galvanomagnetic and other magnetotransport effects
Materials science
Metals, semimetals and alloys
Physics
Specific materials
Theoretical study
Calculation
Hall effect
Thin film
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Summary:A relationship is analytically defined between the Hall coefficient and the product of the resistivity and the temperature coefficient of a thin metal film. Attention is given to the electrical characteristics of the metal film in terms of the true electron path in a Larmor orbit, the scattering probability, the effects on the path by simultaneously-applied electric and magnetic fields, and the sample conductivity. Account is taken of the presence of impurities and an expression is found for the Hall coefficient in homogeneous materials. The coefficient is proportional to the resistivity and temperature of the metal.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0261-8028
1573-4811
DOI:10.1007/BF00720039