5-W Reliable Operation Over 2000 h of 5-mm-Wide 650-nm AlGaInP-GaInP-AlGaAs Laser Bars With Asymmetric Cladding Layers

Reliable operation of 650-nm laser bars with GaInP quantum wells embedded in AlGaInP waveguide layers and n-AlInP and p-AlGaAs cladding layers is reported. The 5-mm-wide bars consisting of ten emitters with 100-mum-wide stripe width showed reliable operation over 2000 h at 5 W

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Bibliographic Details
Published inIEEE photonics technology letters Vol. 18; no. 18; pp. 1955 - 1957
Main Authors Sumpf, B., Zorn, M., Staske, R., Fricke, J., Ressel, P., Erbert, G., Weyers, M., Trankle, G.
Format Journal Article
LanguageEnglish
Published New York IEEE 15.09.2006
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Asymmetry
Bars
Cladding
Continuous-wave (CW) lasers
Diode lasers
Emitters
laser reliability
Lasers
Manufacturing
Photonics
Power generation
Pump lasers
Quantum well lasers
Quantum wells
red laser bars
Semiconductor device reliability
Semiconductor lasers
Solid lasers
Waveguide lasers
Waveguides
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Summary:Reliable operation of 650-nm laser bars with GaInP quantum wells embedded in AlGaInP waveguide layers and n-AlInP and p-AlGaAs cladding layers is reported. The 5-mm-wide bars consisting of ten emitters with 100-mum-wide stripe width showed reliable operation over 2000 h at 5 W
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2006.882322