Enhanced bipolar resistive switching of HfO2 with a Ti interlayer

• Published in: Applied physics. A, Materials science & processing Vol. 102; no. 4; pp. 997 - 1001
• Main Authors: Lee, DooSung, Sung, YongHun, Lee, InGun, Kim, JongGi, Sohn, Hyunchul, Ko, Dae-Hong
• Format: Journal Article
• Language: English
• Published: Berlin/Heidelberg Springer-Verlag 01.03.2011
• Subjects: Characterization and Evaluation of Materials; Condensed Matter Physics; Durability; Hafnium oxide; Interlayers; Machines; Manufacturing; Nanotechnology; Optical and Electronic Materials; Physics; Physics and Astronomy; Platinum; Processes; Stacks; Surfaces and Interfaces; Switching; Thin Films; Titanium; Titanium nitride; Resistive Switching; Resistance Random Access Memory; High Resistance State; Resistance Ratio; Subsequent Heat Treatment
• ISSN: 0947-8396; 1432-0630
• DOI: 10.1007/s00339-011-6312-5

The characteristics of resistive switching of TiN/HfO 2 /Ti/HfO 2 /Pt/Ti stacks on SiO 2 /Si substrates were investigated and compared to TiN/HfO 2 /Pt/Ti stacks in order to study Ti interlayer effects on resistive switching. The Ti interlayers were deposited in situ during the reactive sputtering of HfO 2 films. The current–voltage measurements showed that the Ti interlayers enhanced the memory window but reduced the endurance of SET/RESET operations. The energy filtered images by TEM showed asymmetric oxygen accumulation at the Ti/HfO x interfaces. Subsequent heat treatment improved the endurance of SET/RESET operation of TiN/HfO 2 /Ti/HfO 2 /Pt/Ti stacks.