Hydrogenation-induced microstructure changes of pseudo-binary (PrxMg1−x)Ni2 Laves compounds

• We systematically investigate hydrogenation-induced microstructural changes of pseudo-binary (PrxMg1−x)Ni2 Laves compounds. • We use transmission electron microscopy (TEM), instead of X-ray diffraction techniques conventinally used so far. • We find a novel hydrogenation-induced phenomenon, which...

Full description

Saved in:
Bibliographic Details
Published inJournal of alloys and compounds Vol. 580; pp. S81 - S84
Main Authors Park, Ihho, Terashita, N., Abe, Eiji
Format Journal Article Conference Proceeding
LanguageEnglish
Published Kidlington Elsevier B.V 01.12.2013
Elsevier
Subjects
Online AccessGet full text

Cover

Loading…
More Information
Summary:• We systematically investigate hydrogenation-induced microstructural changes of pseudo-binary (PrxMg1−x)Ni2 Laves compounds. • We use transmission electron microscopy (TEM), instead of X-ray diffraction techniques conventinally used so far. • We find a novel hydrogenation-induced phenomenon, which is hydrogenation-induced micro-phase separation (HIMPS). Using transmission electron microscopy (TEM), we systematically investigate hydrogenation-induced microstructural changes of pseudo-binary (PrxMg1−x)Ni2 Laves compounds varying x from 0.3 to 1.0, which lead to the averaged constituent atomic-size ratio RA/RB ranging 1.34–1.47 of the supposed AB2 compound. It is empirically known for the AB2 Laves compounds that hydrogen-induced-amorphization (HIA) takes place when the RA/RB exceeds 1.37. We find that, based on careful analyses of electron diffraction patterns and TEM images, the hydrogenation-processed microstructures of the (PrxMg1−x)Ni2 compounds exceeding the critical ratio are not pure amorphous but composed of Ni nano-crystals embedded in an amorphous matrix of hydride PrH2. This provides a direct evidence of hydrogenation-induced micro-phase separation (HIMPS), and accordingly it is suggested that HIA believed so far should be attributed to HIMPS phenomenon.
ISSN:0925-8388
1873-4669
DOI:10.1016/j.jallcom.2013.01.108