Effect of proton doping and heat treatment on the structure of single crystal silicon

• Published in: Modern Electronic Materials Vol. 5; no. 1; pp. 13 - 19
• Main Authors: Asadchikov1, Victor E, Dyachkova, Irina G, Zolotov, Denis A, Krivonosov, Yuri S, Bublik, Vladimir T, Shikhov, Alexander I
• Format: Journal Article
• Language: English
• Published: Moscow Pensoft Publishers 01.03.2019
• Subjects: Annealing; Deformation effects; Heat treating; Heat treatment; Hydrogen; Hydrogen ions; Ion implantation; Protons; Silicon; Single crystals; Structure (Literature); Technology; Thickness; X ray topography; X-ray diffraction; Russia
• ISSN: 2452-2449; 2452-1779
• DOI: 10.3897/j.moem.5.1.46413

The quality and structural perfection of single crystal silicon have been studied using double-crystal X-ray diffraction after hydrogen ion implantation and thermal annealing used in a number of semiconductor technologies. The fundamental difference of this approach is the possibility to rapidly obtain reliable experimental results which were confirmed using X-ray topography. Data have been presented for the condition of the damaged layer in n -type silicon single crystals (r = 100 W × cm) having the (111) orientation and a thickness of 2 mm after proton implantation at energies E = 200, 300 and 100 + 200 + 300 keV and dose D = 2 × 10 16 cm -2 and subsequent heat treatment in the T = 100–900 °C range. Using the method of integral characteristics we have revealed a nonmonotonic dependence of the integral characteristics of the damaged layer, i.e., the mean effective thickness L eff and the mean relative deformation D a / a , on the annealing temperature, the maximum deformation being observed for ~300 °C. The results have allowed us to make a general assessment of the damaged layer condition after heat treatment.