Bridgman Growth and Intrinsic Luminescence of Pure Cs2ZnCl4 Single Crystal

• Published in: Journal of electronic materials Vol. 51; no. 11; pp. 6512 - 6517
• Main Authors: Wang, Biao, Zhu, Mengqi, Jia, Xinhui, Zhang, Yutong, Li, Jing, Wang, Jiyang
• Format: Journal Article
• Language: English
• Published: New York Springer US 01.11.2022; Springer Nature B.V
• Subjects: Bridgman method; Characterization and Evaluation of Materials; Chemistry and Materials Science; Crystal defects; Crystal growth; Crystal structure; Density distribution; Electronics and Microelectronics; Energy gap; First principles; Instrumentation; Luminescence; Materials Science; Nanocrystals; Optical and Electronic Materials; Optical properties; Original Research Article; Photoelectricity; Photoluminescence; Quartz; Raw materials; Refractivity; Scintillation counters; Single crystals; Solid State Physics; Substrates; Temperature dependence; defect luminescence; Optical material; crystal growth; scintillation crystals
• ISSN: 0361-5235; 1543-186X
• DOI: 10.1007/s11664-022-09890-3

In recent years, Cs 2 ZnCl 4 crystal has become an ideal substrate for various functional doped ions due to its large bandgap, showing potential in photodetectors and scintillators. In practical application, the intrinsic defect luminescence of bulk crystals has an important effect on the photoelectrical properties. In this work, Ø 12 mm × 90 mm Cs 2 ZnCl 4 single crystal was grown by the vertical Bridgman method. The theoretical bandgap, state density distribution, and refractive index curve of the crystal were obtained by first-principles calculation of the structure data. The luminescence properties of the crystal were characterized, including photoluminescence spectrum and radioluminescence spectrum. The temperature-dependent photoluminescence spectrum of the crystal was studied, and the luminescence process of the defects in the crystal was analyzed by the experimental results.