Surface in situ reconstruction of inorganic perovskite films enabling long carrier lifetimes and solar cells with 21% efficiency

All-inorganic perovskites are emerging as excellent photovoltaic candidates for single-junction or tandem solar cells. However, large energy loss due to non-radiative recombination is the main constraint for performance enhancement. Accordingly, we developed a surface in situ reconstruction (SISR) s...

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Published inNature energy Vol. 8; no. 4; pp. 372 - 380
Main Authors Chu, Xinbo, Ye, Qiufeng, Wang, Zhenhan, Zhang, Chen, Ma, Fei, Qu, Zihan, Zhao, Yang, Yin, Zhigang, Deng, Hui-Xiong, Zhang, Xingwang, You, Jingbi
Format Journal Article
LanguageEnglish
Published London Nature Publishing Group UK 01.04.2023
Nature Publishing Group
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Summary:All-inorganic perovskites are emerging as excellent photovoltaic candidates for single-junction or tandem solar cells. However, large energy loss due to non-radiative recombination is the main constraint for performance enhancement. Accordingly, we developed a surface in situ reconstruction (SISR) strategy for inorganic perovskite by CsF treatment, which can suppress non-radiative recombination and promote hole extraction simultaneously. Surface defects can be effectively passivated by the introduced fluorine, and carrier lifetime was prolonged from 11.5 ns to 737.2 ns. In addition, a wider-bandgap perovskite layer can be generated as a graded heterojunction to facilitate hole extraction. The SISR reaction mechanism was also verified from both kinetic calculations and experiments. As a result, CsPbI x Br 3− x solar cell with SISR achieved an efficiency of 21.02% with a high open-circuit voltage of 1.27 V and fill factor of 85.3%. This work provides an effective approach to modulate inorganic perovskite surfaces for the design of efficient solar cells. Inorganic perovskite solar cells suffer from charge carrier losses. Chu et al. treat the perovskite surface with caesium fluoride, forming a wider-bandgap perovskite that increases the carrier lifetime and hole extraction efficiency.
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ISSN:2058-7546
2058-7546
DOI:10.1038/s41560-023-01220-z