Optimization of π – Gate AlGaN/AlN/GaN HEMTs for Low Noise and High Gain Applications

• Published in: SILICON Vol. 14; no. 2; pp. 393 - 404
• Main Authors: Sehra, Khushwant, Kumari, Vandana, Gupta, Mridula, Mishra, Meena, Rawal, D. S., Saxena, Manoj
• Format: Journal Article
• Language: English
• Published: Dordrecht Springer Netherlands 2022; Springer Nature B.V
• Subjects: Aluminum gallium nitrides; Aluminum nitride; Asymmetry; Chemistry; Chemistry and Materials Science; Electric fields; Environmental Chemistry; Gallium nitrides; High electron mobility transistors; High gain; Inorganic Chemistry; Lasers; Low noise; Materials Science; Optical Devices; Optics; Optimization; Original Paper; Photonics; Polymer Sciences; Receivers & amplifiers; Stability analysis; Transistors; Stern stability factor; Minimum noise figure; Gate recess; Intrinsic gain; High Electron mobility transistors
• ISSN: 1876-990X; 1876-9918
• DOI: 10.1007/s12633-020-00805-7

This paper presents a comprehensive TCAD based assessment to evaluate the intrinsic gain and minimum noise figure metrics of the T – Gate, and the π – Gate AlGaN/AlN/GaN HEMTs along with their recessed architectures. The work presented in this paper, to the best of author’s knowledge, is first in its attempt to systematically bring out both the effect of minimum noise figure metrics and intrinsic gain at the device level for the π – Gate architecture and their recessed counterparts whilst evaluating its stability for high frequency operations. Comparison demonstrates an enhancement in intrinsic gain by 64.5% in case of asymmetric π – Gate and 77% for asymmetric recessed π – Gate in comparison to their T – Gate counterparts. Further, the said architectures possess a wider range of flat gain operation with suppressed values of minimum noise figure metrics. These modifications result in a modest trade off in the minimum noise figures when best case is considered and compared with their T – Gate counterparts. Additionally, it is also demonstrated that such device architectures demonstrate much stable high frequency operation in comparison to their primer. The results so presented establish the superiority of the π – Gate AlGaN/AlN/GaN HEMTs for low noise and high gain applications.