Etchant-based chemical doping of large-area graphene and the optical characterization via terahertz time-domain spectroscopy
We investigate simple chemical doping process and the optical characterization of large-area graphene. The large-area graphene is grown on copper foil by chemical vapor deposition method, where carrier density is varied by exposure duration within FeCl 3 solution after complete etching of copper. Us...
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| Published in | Journal of the Korean Physical Society Vol. 82; no. 1; pp. 19 - 23 |
|---|---|
| Main Authors | , , , , , , |
| Format | Journal Article |
| Language | English |
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Seoul
The Korean Physical Society
2023
Springer Nature B.V |
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| Abstract | We investigate simple chemical doping process and the optical characterization of large-area graphene. The large-area graphene is grown on copper foil by chemical vapor deposition method, where carrier density is varied by exposure duration within FeCl
3
solution after complete etching of copper. Using terahertz time-domain spectroscopy, we obtain terahertz conductivity with different exposure duration. We confirm that the longer exposure time, the higher conductivity, which results from
p
-type doping due to copper etchant. The result implies that varying etching time during transfer process enables distinguished Fermi levels in graphene sheet, essential for simple fabrication of doping-level-controlled graphene sample. |
|---|---|
| AbstractList | We investigate simple chemical doping process and the optical characterization of large-area graphene. The large-area graphene is grown on copper foil by chemical vapor deposition method, where carrier density is varied by exposure duration within FeCl
3
solution after complete etching of copper. Using terahertz time-domain spectroscopy, we obtain terahertz conductivity with different exposure duration. We confirm that the longer exposure time, the higher conductivity, which results from
p
-type doping due to copper etchant. The result implies that varying etching time during transfer process enables distinguished Fermi levels in graphene sheet, essential for simple fabrication of doping-level-controlled graphene sample. We investigate simple chemical doping process and the optical characterization of large-area graphene. The large-area graphene is grown on copper foil by chemical vapor deposition method, where carrier density is varied by exposure duration within FeCl3 solution after complete etching of copper. Using terahertz time-domain spectroscopy, we obtain terahertz conductivity with different exposure duration. We confirm that the longer exposure time, the higher conductivity, which results from p-type doping due to copper etchant. The result implies that varying etching time during transfer process enables distinguished Fermi levels in graphene sheet, essential for simple fabrication of doping-level-controlled graphene sample. |
| Author | Kim, Nahun Bahk, Young-Mi Jung, Dawoon Kim, Sihoon Hong, Sung Ju Kim, Yushin Han, Gang Hee |
| Author_xml | – sequence: 1 givenname: Nahun surname: Kim fullname: Kim, Nahun organization: Department of Physics, Incheon National University – sequence: 2 givenname: Dawoon surname: Jung fullname: Jung, Dawoon organization: Department of Physics, Incheon National University – sequence: 3 givenname: Yushin surname: Kim fullname: Kim, Yushin organization: Department of Physics, Incheon National University – sequence: 4 givenname: Sihoon surname: Kim fullname: Kim, Sihoon organization: Department of Physics, Incheon National University – sequence: 5 givenname: Sung Ju surname: Hong fullname: Hong, Sung Ju email: sjh@kangwon.ac.kr organization: Division of Science Education, Kangwon National University – sequence: 6 givenname: Gang Hee surname: Han fullname: Han, Gang Hee email: ganghee@inu.ac.kr organization: Department of Physics, Incheon National University – sequence: 7 givenname: Young-Mi surname: Bahk fullname: Bahk, Young-Mi email: ymb@inu.ac.kr organization: Department of Physics, Incheon National University |
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| Keywords | Copper etching Terahertz spectroscopy Graphene Chemical vapor deposition Doping |
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| Snippet | We investigate simple chemical doping process and the optical characterization of large-area graphene. The large-area graphene is grown on copper foil by... |
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| SubjectTerms | Carrier density Chemical vapor deposition Copper Doping Etchants Etching Exposure Ferric chloride Graphene Mathematical and Computational Physics Metal foils Molecules and Optics Optical properties Original Paper - Atoms Particle and Nuclear Physics Physics Physics and Astronomy Spectroscopy Theoretical Time domain analysis |
| Title | Etchant-based chemical doping of large-area graphene and the optical characterization via terahertz time-domain spectroscopy |
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