Etchant-based chemical doping of large-area graphene and the optical characterization via terahertz time-domain spectroscopy

We investigate simple chemical doping process and the optical characterization of large-area graphene. The large-area graphene is grown on copper foil by chemical vapor deposition method, where carrier density is varied by exposure duration within FeCl 3 solution after complete etching of copper. Us...

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Bibliographic Details
Published inJournal of the Korean Physical Society Vol. 82; no. 1; pp. 19 - 23
Main Authors Kim, Nahun, Jung, Dawoon, Kim, Yushin, Kim, Sihoon, Hong, Sung Ju, Han, Gang Hee, Bahk, Young-Mi
Format Journal Article
LanguageEnglish
Published Seoul The Korean Physical Society 2023
Springer Nature B.V
Subjects
Carrier density
Chemical vapor deposition
Copper
Doping
Etchants
Etching
Exposure
Ferric chloride
Graphene
Mathematical and Computational Physics
Metal foils
Molecules and Optics
Optical properties
Original Paper - Atoms
Particle and Nuclear Physics
Physics
Physics and Astronomy
Spectroscopy
Theoretical
Time domain analysis
Copper etching
Terahertz spectroscopy
Graphene
Chemical vapor deposition
Doping
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Summary:We investigate simple chemical doping process and the optical characterization of large-area graphene. The large-area graphene is grown on copper foil by chemical vapor deposition method, where carrier density is varied by exposure duration within FeCl 3 solution after complete etching of copper. Using terahertz time-domain spectroscopy, we obtain terahertz conductivity with different exposure duration. We confirm that the longer exposure time, the higher conductivity, which results from p -type doping due to copper etchant. The result implies that varying etching time during transfer process enables distinguished Fermi levels in graphene sheet, essential for simple fabrication of doping-level-controlled graphene sample.
ISSN:0374-4884
1976-8524
DOI:10.1007/s40042-022-00680-y