Parameter sensitivity analysis for computer modelling of metal-semiconductor junctions

The aim of this paper is to give the sensitivity of the I- V characteristics of metal-semiconductor diodes to various parameters used in computer modelling. Based on the Crowell-Sze combined thermionic emission-diffusion theory, the primary sensitivities to the barrier height, effective recombinatio...

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Bibliographic Details
Published inSolid-state electronics Vol. 29; no. 6; pp. 613 - 617
Main Authors Tarnay, K., Elfsten, B., Masszi, F., Tove, P.A.
Format Journal Article
LanguageEnglish
Published Oxford Elsevier Ltd 1986
Elsevier Science
Subjects
Applied sciences
Diodes
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Sensitivity
Barrier height
Voltage current curve
Diode
Semiconductor metal contact
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Summary:The aim of this paper is to give the sensitivity of the I- V characteristics of metal-semiconductor diodes to various parameters used in computer modelling. Based on the Crowell-Sze combined thermionic emission-diffusion theory, the primary sensitivities to the barrier height, effective recombination velocity and effective diffusion velocity are given. The secondary sensitivities to the diffusion coefficient, doping density etc. are also discussed. An approximation for the field dependence of the optical phonon scattering factor is given.
ISSN:0038-1101
1879-2405
1879-2405
DOI:10.1016/0038-1101(86)90142-5