Status of the growth and fabrication of AlGaN-based UV laser diodes for near and mid-UV wavelength

• Published in: Journal of materials research Vol. 36; no. 23; pp. 4638 - 4664
• Main Authors: Kirste, Ronny, Sarkar, Biplab, Reddy, Pramod, Guo, Qiang, Collazo, Ramon, Sitar, Zlatko
• Format: Journal Article
• Language: English
• Published: Cham Springer International Publishing 14.12.2021; Springer Nature B.V
• Subjects: Applied and Technical Physics; Biomaterials; Chemistry and Materials Science; Diodes; Inorganic Chemistry; Invited Feature Paper-Review; Materials Engineering; Materials research; Materials Science; Nanotechnology; Semiconductor lasers; Ultraviolet lasers; Dopant; Optoelectronic; Electrical properties; Optical properties; Laser

In this article, the development of mid-UV laser diodes based on the AlGaN materials system is reviewed. The targeted wavelength for these lasers covers the range from 200 to 350 nm. After introducing UV laser diodes and explaining their applications, the challenges in growth, design, and fabricatio...