Status of the growth and fabrication of AlGaN-based UV laser diodes for near and mid-UV wavelength

In this article, the development of mid-UV laser diodes based on the AlGaN materials system is reviewed. The targeted wavelength for these lasers covers the range from 200 to 350 nm. After introducing UV laser diodes and explaining their applications, the challenges in growth, design, and fabricatio...

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Bibliographic Details
Published inJournal of materials research Vol. 36; no. 23; pp. 4638 - 4664
Main Authors Kirste, Ronny, Sarkar, Biplab, Reddy, Pramod, Guo, Qiang, Collazo, Ramon, Sitar, Zlatko
Format Journal Article
LanguageEnglish
Published Cham Springer International Publishing 14.12.2021
Springer Nature B.V
Subjects
Applied and Technical Physics
Biomaterials
Chemistry and Materials Science
Diodes
Inorganic Chemistry
Invited Feature Paper-Review
Materials Engineering
Materials research
Materials Science
Nanotechnology
Semiconductor lasers
Ultraviolet lasers
Dopant
Optoelectronic
Electrical properties
Optical properties
Laser
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Summary:In this article, the development of mid-UV laser diodes based on the AlGaN materials system is reviewed. The targeted wavelength for these lasers covers the range from 200 to 350 nm. After introducing UV laser diodes and explaining their applications, the challenges in growth, design, and fabrication are discussed. In addition, recent results from optically and electrically injected UV laser diodes are presented. Finally, we will discuss possible pathways to improve performance and give an outlook on the expected development of UV laser diodes in the near future. Graphical abstract
Bibliography:ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 14
ISSN:0884-2914
2044-5326
DOI:10.1557/s43578-021-00443-8