Investigation of Schottky emission and space charge limited current (SCLC) in Au/SnO2/n-Si Schottky diode with gamma-ray irradiation

The current–voltage characteristics of Au/SnO 2 / n -Si Schottky diode before and after irradiation by 60 Co γ-ray with an irradiation dose of 10 kGy have been investigated. The effects of γ-ray irradiation on the main diode parameters have been studied. The forward bias ln( I F )–ln( V F ) characte...

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Bibliographic Details
Published inJournal of materials science. Materials in electronics Vol. 32; no. 12; pp. 15857 - 15863
Main Authors Akgül, Fatime Duygu, Eymur, Serkan, Akın, Ümmühan, Yüksel, Ömer Faruk, Karadeniz, Hande, Tuğluoğlu, Nihat
Format Journal Article
LanguageEnglish
Published New York Springer US 01.06.2021
Springer Nature B.V
Subjects
Characterization and Evaluation of Materials
Chemistry and Materials Science
Current voltage characteristics
Emission analysis
Emissions control
Food irradiation
Gamma rays
Materials Science
Optical and Electronic Materials
Radiation dosage
Schottky diodes
Space charge
Tin dioxide
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Summary:The current–voltage characteristics of Au/SnO 2 / n -Si Schottky diode before and after irradiation by 60 Co γ-ray with an irradiation dose of 10 kGy have been investigated. The effects of γ-ray irradiation on the main diode parameters have been studied. The forward bias ln( I F )–ln( V F ) characteristics confirmed that the conduction mechanism is dominated by the space-charge limited current (SCLC) conduction. Also, the current transport mechanism of the Au/SnO 2 / n -Si Schottky diode has been examined through ln( I R )– V R 1/2 characteristics, indicating that the Schottky emission dominates the current mechanism for 0 kGy and 10 kGy.
ISSN:0957-4522
1573-482X
DOI:10.1007/s10854-021-06138-4