Optical and dielectric properties of metal halide perovskites 2D

• Published in: Bulletin of materials science Vol. 44; no. 2; p. 113
• Main Authors: Ettakni, M, Kassou, S, Ghyati, S, Ouaaka, M, Yousfi, S, Khechoubi, M, Bih, L, Bih, H, Khmou, A
• Format: Journal Article
• Language: English
• Published: Bangalore Indian Academy of Sciences 01.06.2021; Springer Nature B.V
• Subjects: Capacitance; Chemistry and Materials Science; Dielectric properties; Energy gap; Engineering; Equivalent circuits; Grain boundaries; High resolution electron microscopy; Materials Science; Metal halides; Morphology; Optical properties; Perovskites; Photovoltaic cells; Room temperature; Temperature; Thermogravimetric analysis; Visible spectrum; X ray powder diffraction; impedance spectroscopy; thermal properties; electrical conductivity; Organic–inorganic hybrid perovskite; optical
• ISSN: 0250-4707; 0973-7669
• DOI: 10.1007/s12034-021-02418-1

The two-dimensional (2D) metal halide hybrid (C 2 H 5 NH 3 ) 2 MnCl 4 has been grown by slow evaporation technique at room temperature. The phase-purity and morphology were confirmed using powder X-ray diffraction, scanning electron microscope and high-resolution transmission electron microscopy studies. Optical properties like reflectance and bandgap were determined from UV–visible spectrum. The dielectric properties of the studied compound have been investigated using impedance spectroscopy as a function of frequency for different temperatures from 1 Hz to 1 MHz between 353 and 453 K. The real and imaginary components Z ′ and Z ″ of impedance are fitted using an equivalent circuit model, consisted of a series combination of parallel resistance-constant phase elements of grain (Rg║CPEg), resistance-capacitance of grain boundary (Rgb║Cgb) and resistance-capacitance of electrode (Rel║Cel), which reveal the existence of distribution of relaxation times and thermally activated non-Debye-like relaxation. The frequency-dependent AC conductivity is well described by Jonscher’s universal power law, which follows the Arrhenuis relation. The above results indicate the semiconductor behaviour with wide bandgap energy.