Dielectric dispersion and relaxations in (PMMA/PVDF)/ZnO nanocomposites

• Published in: Polymer bulletin (Berlin, Germany) Vol. 79; no. 4; pp. 2443 - 2459
• Main Author: Mohammed, M. I.
• Format: Journal Article
• Language: English
• Published: Berlin/Heidelberg Springer Berlin Heidelberg 01.04.2022; Springer Nature B.V
• Subjects: Ambient temperature; Characterization and Evaluation of Materials; Chemistry; Chemistry and Materials Science; Complex Fluids and Microfluidics; Dielectric loss; Dielectric properties; Dielectric relaxation; Electrical resistivity; Memory devices; Nanocomposites; Nanoparticles; Organic Chemistry; Original Paper; Permittivity; Physical Chemistry; Polymer blends; Polymer Sciences; Polymethyl methacrylate; Soft and Granular Matter; Spectrum analysis; Temperature dependence; Zinc oxide; Zinc oxides; AC electrical conductivity; SEM; PMMA/PVDF/ZnO nanocomposites; FTIR; Dielectric behavior; Dielectric relaxation
• ISSN: 0170-0839; 1436-2449
• DOI: 10.1007/s00289-021-03606-z

In latest years, the scientific community has shown important interest in nanocomposites as a new generation of materials with elevated dielectric constant and low dielectric loss factor for microelectronics. In this work, the effect of ZnO nanoparticles on PMMA/PVDF blend. Solution-cast technique used to prepare these nanocomposites. FTIR and SEM studies were performed. The effect of ZnO doping on the complex dielectric permittivity, electric modulus properties and ac electrical conductivity of these nanocomposites has been investigated at ambient temperature. Dielectric constant ε ′, dielectric loss ε ″, and the loss tangent decreased with increasing frequency and increased with increasing temperature. The dielectric constant values were found almost high (∼24) at (100 Hz) and were referred to the presence of interfacial polarization. The existence of loss peak in ε ″, tan δ and, M " attributed to α-relaxation existed in the nanocomposites. The temperature-dependent ac conductivity values obeyed Arrhenius behavior. These nanocomposites can be selected for implying capacitors and application of the memory device.