A mixed-level framework to estimate SER induced by SEMT in advanced technologies

As the complementary metal oxide semiconductor feature size shrinks further, single event multiple transients (SEMTs) become more serious. However, SEMTs have not yet been appropriately modelled through traditional soft error rate (SER) estimation methods. Therefore, this paper presents a mixed-leve...

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Bibliographic Details
Published inInternational journal of electronics Vol. 103; no. 5; pp. 807 - 818
Main Authors Biwei, Liu, Yankang, Du, Liping, Wang
Format Journal Article
LanguageEnglish
Published Abingdon Taylor & Francis 03.05.2016
Taylor & Francis LLC
Subjects
charge sharing
Computer simulation
Convergence
Estimates
Metal oxide semiconductors
mixed-level simulation
pulse convergence
Semiconductors
SEMT
SER
Simulation
Soft errors
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Summary:As the complementary metal oxide semiconductor feature size shrinks further, single event multiple transients (SEMTs) become more serious. However, SEMTs have not yet been appropriately modelled through traditional soft error rate (SER) estimation methods. Therefore, this paper presents a mixed-level framework to estimate SER induced by SEMTs. The precision of the proposed framework is verified through HSPICE simulation. The results show that multiple pulses and convergence of SEMTs significantly affect SER estimation.
Bibliography:ObjectType-Article-1
SourceType-Scholarly Journals-1
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content type line 23
ISSN:0020-7217
1362-3060
DOI:10.1080/00207217.2015.1072845