Study on the inversion of doped concentration induced by millisecond pulsed laser irradiation silicon-based avalanche photodiode

In this paper, an experimental study of silicon-based avalanche photodiode (Si-APD) with millisecond pulse laser irradiation was carried out, and the C-V curve of Si-APD was obtained by using a semiconductor analyzer. Based on the single-side abrupt junction character of n+p, combined with the corre...

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Bibliographic Details
Published inApplied optics. Optical technology and biomedical optics Vol. 57; no. 5; p. 1051
Main Authors Yuan, Dong, Di, Wang, Zhi, Wei, Ran, Fu Tai
Format Journal Article
LanguageEnglish
Published United States 10.02.2018
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Summary:In this paper, an experimental study of silicon-based avalanche photodiode (Si-APD) with millisecond pulse laser irradiation was carried out, and the C-V curve of Si-APD was obtained by using a semiconductor analyzer. Based on the single-side abrupt junction character of n+p, combined with the corresponding theoretical derivation, the doping concentration varying with the axial depth of damaged Si-APD was obtained by inverse computation. The lattice dislocation and junction reduction were the fundamental causes of the reduced doping concentration. The research results provide a new method for the study of the internal doping concentration for detectors with millisecond pulse laser damage.
ISSN:2155-3165
DOI:10.1364/AO.57.001051